Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Table 1

Parameters used in the theoretical calculations shown in Figure 6; indices h and e are for holes and electrons, respectively.

(nm)	(nm)	(Ω^−1 cm^−1)	(Ω^−1cm^−1)	(eV)	(eV)
2.53	19.0	1 × 10^−16	8 × 10^−17	3.15	4.7