Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Table 3

Flatband voltages and oxide charge after the write and the erase pulse.

	Erase	Write
(V)	0.41	0.76
(cm^−2)	−3.0 × 10^12	−4.0 × 10^12