Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

<div>(a) Melting threshold power as a function of Si<sub>0.2</sub>Ge<sub>0.8</sub> thicknesses at 873 K. (b) Peak temperature at the surface of Si<sub>0.2</sub>Ge<sub>0.8</sub> layer simulated using a range of laser powers and Si<sub>0.2</sub>Ge<sub>0.8</sub> thicknesses.</div>

Advances in Condensed Matter Physics

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Figure 6

Figure 6: Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate 