Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate

<div>(a) Evolution of the temperature at the surface of Si<sub>0.2</sub>Ge<sub>0.8</sub> layer in the scan direction x and (b) longitudinal temperature changes of the sample at x = 0. The vertical lines delimit the area of Si<sub>0.2</sub>Ge<sub>0.8</sub> layer.</div>

Advances in Condensed Matter Physics

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Figure 9

Figure 9: Thermophysics Simulation of Laser Recrystallization of High-Ge-Content SiGe on Si Substrate 