Table of Contents Author Guidelines Submit a Manuscript
Advances in Condensed Matter Physics
Volume 2018, Article ID 9789370, 14 pages
https://doi.org/10.1155/2018/9789370
Research Article

Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

1Institute of Physics and Technology, Petrozavodsk State University, Petrozavodsk 185910, Russia
2Institute of Geology, Karelian Research Centre, Russian Academy of Sciences, Petrozavodsk 185910, Russia

Correspondence should be addressed to Alexander Pergament; ur.ailerak.usp@grepa

Received 28 October 2017; Accepted 27 December 2017; Published 1 February 2018

Academic Editor: Joseph S. Poon

Copyright © 2018 Sergey Burdyukh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The paper describes the effect of doping with hydrogen and tungsten by means of plasma-immersion ion implantation (PIII) on the properties of vanadium dioxide and hydrated vanadium pentoxide films. It is shown that the parameters of the metal-insulator phase transition in VO2 thin films depend on the hydrogen implantation dose. Next, we explore the effect of PIII on composition, optical properties, and the internal electrochromic effect (IECE) in V2O5·nH2O films. The variations in the composition and structure caused by the hydrogen insertion, as well as those caused by the electrochromic effect, are studied by nuclear magnetic resonance, thermogravimetry, Raman spectroscopy, and X-ray structural analysis. It is shown that the ion implantation-induced hydrogenation can substantially enhance the manifestation and performance of the IECE in V2O5 xerogel films. Finally, the effect of PIII-assisted doping with W on the parameters of electrical switching in Au/V2O5·nH2O/Au sandwich structures is examined. It is shown that implanting small tungsten doses improves the switching parameters after forming. When implanting large doses, switching is observed without electroforming, and if electroforming is applied, the switching effect, on the contrary, disappears.