Modification of the Properties of Vanadium Oxide Thin Films by Plasma-Immersion Ion Implantation

Table 1

Parameters of plasma-immersion ion implantation.

Parameter, unit	Implantation of H into VO2	Implantation of H into V2O5 gel	Implantation of W into V2O5 gel
Discharge current, A	9.5	9	10
Discharge voltage, V	69.5	75	55
Cathode heating current, A	65	60	65
Pressure, Pa	4	4	1.2 (Ar); 3.8 (W(CO)6)
Gas flow, m^3Pa/s	0.0018 (H2)	0.0018 (H2)	0.0018 (Ar)
applied to sample, kV	2	2	2
, mA	20	50	50
, μs	10	10	5
, min	1–5	5–30	1–5
, kHz	1-2	2	1.7