Finite Element Stress Model of Direct Band Gap Ge Implementation Method Compatible with Si Process

Table 2

Simulation parameters of the SiGe material under different Ge components.

Ge components	Young’s modulus (GPa)	Virtual thermal expansion coefficient (10^−5/K)	Poisson’s ratio
0.2	156.6	−3.21	0.2786
0.3	153.5	−2.81	0.2779
0.4	150.4	−2.41	0.2772
0.5	147.3	−2.0	0.2765