Electronic Transport in the V-Shaped Edge Distorted Zigzag Graphene Nanoribbons with Substitutional Doping

Figure 1

Schematic (top view and side view) of device geometries: (a) 4-DZGNR, (b) Si-4-DZGNR, (c) 2Si-4-DZGNR, (d) 6-DZGNR, (e) Si-6-DZGNR, (f) 2Si-6-DZGNR, (g) 8-DZGNR, (h) Si-8-DZGNR, and (i) 2Si-8-DZGNR. The hydrogen-passivated V-shaped edge DZGNRs with the single Si substitution ((b), (e), and (h)) and the double one ((c), (f), and (i)) at the center of the models.

(a)

(b)

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(e)

(f)

(g)

(h)

(i)