Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS<sub>2</sub>-Doped Mn

<div>Optimized input structures of <svg height="8.69875pt" id="M29" style="vertical-align:-0.3499298pt" version="1.1" viewbox="-0.0498162 -8.34882 45.831 8.69875" width="45.831pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M456 178V225H360V632H320C217 496 115 347 20 206V178H280V106C280 40 276 34 189 27V0H445V27C364 34 360 39 360 106V178H456ZM280 225H82C149 335 214 431 278 520H280V225Z"></path></g><g transform="matrix(.013,0,0,-0.013,9.146,0)"><path d="M528 54L331 254L528 455L492 493L294 291L96 493L60 455L257 254L60 54L96 16L294 217L492 16L528 54Z"></path></g><g transform="matrix(.013,0,0,-0.013,19.682,0)"><path d="M456 178V225H360V632H320C217 496 115 347 20 206V178H280V106C280 40 276 34 189 27V0H445V27C364 34 360 39 360 106V178H456ZM280 225H82C149 335 214 431 278 520H280V225Z"></path></g><g transform="matrix(.013,0,0,-0.013,28.828,0)"><path d="M528 54L331 254L528 455L492 493L294 291L96 493L60 455L257 254L60 54L96 16L294 217L492 16L528 54Z"></path></g><g transform="matrix(.013,0,0,-0.013,39.364,0)"><path d="M384 0V27C293 34 287 42 287 114V635C232 613 172 594 109 583V559L157 557C201 555 205 550 205 499V114C205 42 199 34 109 27V0H384Z"></path></g></svg> BL MoS<sub>2</sub>: (a) top view for pure BL MoS<sub>2</sub>; (b) top view for one Mn-doped BL MoS<sub>2</sub>; (c) top view for two Mn-doped BL MoS<sub>2</sub>; (d) side view for two Mn-doped BL MoS<sub>2</sub></div>

Advances in Condensed Matter Physics

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Figure 2

Figure 2: Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS<sub>2</sub>-Doped Mn 

Advances in Condensed Matter Physics

Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS2-Doped Mn

Figure 2

Electronic Structure and Room Temperature of 2D Dilute Magnetic Semiconductors in Bilayer MoS₂-Doped Mn