In the past few decades, silicon (Si) complementary metal-oxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction. As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges. To maintain or further improve the transistor performance, novel techniques, device structures, and higher mobility materials like silicon-germanium (SiGe) and germanium (Ge) are explored.

The journal provides a special issue for researchers to report their latest work on emerging Si, SiGe, or Ge technology, devices, and applications. We invite original papers reporting challenges and potential solutions for the state-of-the-art Si CMOS technology.

Potential topics include, but are not limited to:

• Advanced materials including silicon-germanium (SiGe) and germanium (Ge) on Si-based substrates and strain engineering
• Novel process technology including selective epitaxy, surface passivation, gate dielectrics on Si, SiGe, and Ge, dopant incorporation and diffusion, etching, contact technology, and process integration
• High performance devices including mobility-enhanced MOSFETs, MODFETs, heterojunction bipolar transistors (HBTs), tunneling field-effect transistors (T-FETs), optoelectronic devices, and quantum devices
• Reliability, theory, modeling, and simulations of Si, SiGe, and Ge materials and devices