Advances in Condensed Matter Physics

Si- and Ge-Based Electronic Devices


Status
Published

Lead Editor

1Zhejiang University, Hangzhou, China

2The University of Tokyo, Tokyo, Japan

3National Institute of Standard & Technology, Washington, USA


Si- and Ge-Based Electronic Devices

Description

In the past few decades, silicon (Si) complementary metal-oxide-semiconductor (CMOS) field-effect transistors have been scaled exponentially over time for the demand of drive current enhancement and cost reduction. As the technology node advances into sub-20 nm regimes, Si CMOS encounters immense challenges. To maintain or further improve the transistor performance, novel techniques, device structures, and higher mobility materials like silicon-germanium (SiGe) and germanium (Ge) are explored.

The journal provides a special issue for researchers to report their latest work on emerging Si, SiGe, or Ge technology, devices, and applications. We invite original papers reporting challenges and potential solutions for the state-of-the-art Si CMOS technology.

Potential topics include, but are not limited to:

  • Advanced materials including silicon-germanium (SiGe) and germanium (Ge) on Si-based substrates and strain engineering
  • Novel process technology including selective epitaxy, surface passivation, gate dielectrics on Si, SiGe, and Ge, dopant incorporation and diffusion, etching, contact technology, and process integration
  • High performance devices including mobility-enhanced MOSFETs, MODFETs, heterojunction bipolar transistors (HBTs), tunneling field-effect transistors (T-FETs), optoelectronic devices, and quantum devices
  • Reliability, theory, modeling, and simulations of Si, SiGe, and Ge materials and devices

Articles

  • Special Issue
  • - Volume 2015
  • - Article ID 864972
  • - Editorial

Si- and Ge-Based Electronic Devices

Yi Zhao | Rui Zhang | ... | Wenfeng Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 508610
  • - Research Article

Transformation of Holes Emission Paths under Negative Bias Temperature Stress in Deeply Scaled pMOSFETs

Yiming Liao | Xiaoli Ji | ... | Feng Yan
  • Special Issue
  • - Volume 2015
  • - Article ID 423074
  • - Research Article

Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

Xiao-Yu Tang | Ke Dong
  • Special Issue
  • - Volume 2015
  • - Article ID 714097
  • - Research Article

Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices

Lifeng Liu | Yi Hou | ... | Yi Wang
  • Special Issue
  • - Volume 2015
  • - Article ID 834545
  • - Research Article

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Donghua Liu | Xiangming Xu | ... | David Wei Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 639218
  • - Review Article

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Jiabao Sun | Jiwu Lu
  • Special Issue
  • - Volume 2015
  • - Article ID 379746
  • - Research Article

DC Characteristics Optimization of a Double G-Shield 50 V RF LDMOS

Xiangming Xu | Pengliang Ci | ... | David Wei Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 312646
  • - Research Article

Design of a Novel W-Sinker RF LDMOS

Xiangming Xu | Han Yu | ... | David Wei Zhang
  • Special Issue
  • - Volume 2015
  • - Article ID 639769
  • - Research Article

Responsivity Enhanced NMOSFET Photodetector Fabricated by Standard CMOS Technology

Fuwei Wu | Xiaoli Ji | Feng Yan
  • Special Issue
  • - Volume 2015
  • - Article ID 785415
  • - Research Article

High-Electron-Mobility SiGe on Sapphire Substrate for Fast Chipsets

Hyun Jung Kim | Yeonjoon Park | ... | Sang H. Choi
Advances in Condensed Matter Physics
 Journal metrics
Acceptance rate48%
Submission to final decision25 days
Acceptance to publication66 days
CiteScore1.400
Impact Factor0.961
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