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Advances in Electrical Engineering
Table of Contents
Advances in Electrical Engineering
/
2014
/
Article
/
Tab 1
/
Research Article
Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices
Table 1
Main characteristics of test vehicle.
Device type
SJ HV power MOSFETs used
BV
dss
[V]
continuous @ 25°C [A]
[V]
n-ch
600
35
4