Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 3

Main results on wafer bench—implantation on the front body-drain junction.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]	BVdss [V]
5 * 10^12	6.7	180	602	460
1 * 10^12	9.7	242	1176	570
5 * 10^11	12.5	308	1926	630
1 * 10^11	19.1	474	4524	670
No irradiation	29.6	534	7582	680
Std. electrons	8.7	184	877	660