Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 6

Main results on packaged power MOSFETs—implantation on the front EPY layer.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]
5 * 10^12	13	162	1180
1 * 10^12	18	203	1870
5 * 10^11	24	267	3460
1 * 10^11	36	448	8612
Std. electrons	18	180	1800