Proton Irradiations on SJ HV Power MOSFETs to Realize Fast Diode Devices

Table 7

Main results on packaged power MOSFETs—implantation on the front body-drain border.

Dose [cm^−2]	SJ HV power MOSFETs results
	[A]	[ns]	[nC]
5 * 10^12	10	116	630
1 * 10^12	19	233	2370
5 * 10^11	23	254	3133
1 * 10^11	35	414	7626
Std. electrons	18	180	1800