RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Li, Chaoyang; Furuta, Mamoru; Matsuda, Tokiyoshi; Hiramatsu, Takahiro; Furuta, Hiroshi; Hirao, Takashi

doi:https://doi.org/10.1155/2007/26459

Advances in Materials Science and Engineering

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Volume 2007 | Article ID 026459 | https://doi.org/10.1155/2007/26459

RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering

Chaoyang Li,^1,2Mamoru Furuta,^1,2Tokiyoshi Matsuda,^1,2Takahiro Hiramatsu,^2,3Hiroshi Furuta,^1,2and Takashi Hirao^1,2

Academic Editor: Hiroki Habazaki

Received06 Aug 2007

Accepted30 Oct 2007

Published20 Nov 2007

Abstract

Polycrystalline zinc oxide (ZnO) films were prepared by radio frequency (RF) magnetron sputtering under different powers. The XRD results showed that ZnO crystallite size along c-axis decreased by 43% with deposition power increased from 60 W to 300 W, increased 36% with annealing temperature rising to 400∘C. TDS measurement revealed that the desorption peaks of both atomic Zn (60 W-deposited) and oxygen molecule (180 W and 300 W-deposited) obtained from ZnO films were originated from 300∘C. When annealing temperature was higher than 300∘C, the sheet resistance dramatically decreased, and compressive stress in the (002) plane changed to tensile stress as well. The comparison measurements of ZnO films crystallinity strongly suggested that both lower deposition power and certain thermal annealing temperature over 300∘C would contribute to the formation of high quality ZnO films.

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Copyright

Copyright © 2007 Chaoyang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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