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Research Letters in Materials Science
Volume 2008 (2008), Article ID 643743, 4 pages
Research Letter

The Charge Transport Properties of a HWCVD a-Si:H Thin Film under Bending Pressure

1Solid State Physics Department, National Research Center (NRC), Dokki, 12332 Cairo, Egypt
2IV. Physics Institute, University of Göttingen, Friedrich-Hund Platz 1, 37077 Göttingen, Germany
3Department of Physics and Astronomy, University of California, Los Angeles, CA 90024, USA

Received 15 August 2007; Accepted 21 January 2008

Academic Editor: Jeffrey T. Glass

Copyright © 2008 M. Boshta et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. W. Hoffmann, in Pv solar electricity: one among the new millennium industries in Proceedings of the 17th European Photovoltaic Solar Energy Conference (EPVSEC '01), B. McNellis, W. Palz, 4A. Ossenbrink, and P. Helm, Eds., p. 851, WIP, Munich, Germany, October 2001.
  2. B. Rech and H. Wagner, “Potential of amorphous silicon for solar cells,” Applied Physics A, vol. 69, no. 2, pp. 155–167, 1999. View at Publisher · View at Google Scholar
  3. S. Minomura, “Pressure effects on the local atomic structure,” in Semiconductor and Semimetals, J. I. Pankove, Ed., vol. 21A, p. 273, Academic Press, New York, NY, USA, 1984. View at Google Scholar
  4. Y. Okayasu, K. Asai, H. Yamamoto, K. Fukui, and S. Minomura, “Light-induced change of a-Si:H under hydrostatic pressure,” in AIP Conference, Proceedings of the International Conference on Stability of Amorphous Silicon Alloy Materials and Devices, vol. 157, p. 271, Palo Alto, Calif, USA, January 1987.
  5. J. Doyle, R. Robertson, G. H. Lin, M. Z. He, and A. Gallagher, “Production of high-quality amorphous silicon films by evaporative silane surface decomposition,” Journal of Applied Physics, vol. 64, no. 6, pp. 3215–3223, 1988. View at Publisher · View at Google Scholar
  6. H. Wiesmann, A. K. Ghosh, T. McMahon, and M. Strongin, “a-Si: H produced by high-temperature thermal decomposition of silane,” Journal of Applied Physics, vol. 50, no. 5, pp. 3752–3754, 1979. View at Publisher · View at Google Scholar
  7. J. Liebe, K. Heinmann, K. Bärner et al., “Transient ambipolar charge distributions in amorphous and crystalline semiconductors,” Materials Science and Engineering B, vol. 47, no. 3, pp. 244–251, 1997. View at Google Scholar
  8. A. R. Middya, J. Guillert, R. Brenot, J. Perrin, J. E. Bouree, and C. Longeaud, “Electronic properties and device applications of hot-wire CVD polycrystalline silicon films,” in Proceedings of Amorphous Silicon Technology Symposium, S. Wagner, M. Hack, E. A. Schiff, and R. Schropp, Eds., vol. 467, p. 271, MRS, Pittsburgh, Pa, USA, March-April 1997.
  9. R. A. Street, R. L. Weisfield, R. B. Apte et al., “Amorphous silicon sensor arrays for X-ray and document imaging,” Thin Solid Films, vol. 296, no. 1-2, pp. 172–176, 1997. View at Publisher · View at Google Scholar
  10. D. L. Smith, “Thin-Film Deposition: Principles and Practice, chapter 5,” McGraw-Hill, New York, NY, USA, 1995. View at Google Scholar
  11. W. Hahn, M. Boshta, K. Bärner, and R. Braunstein, “The charge transport properties of a-Si:H thin films under hydrostatic pressure,” Materials Science and Engineering B, vol. 130, no. 1–3, pp. 184–188, 2006. View at Publisher · View at Google Scholar
  12. J. Liebe, A. Kattwinkel, K. Bärner, G. Sun, S. Dong, and R. Braunstein, “Determination of the gap state density differences in hydrogenated amorphous silicon and Si/Ge,” Materials Science and Engineering A, vol. 282, no. 1-2, pp. 158–163, 2000. View at Publisher · View at Google Scholar