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Advances in Materials Science and Engineering
Volume 2010 (2010), Article ID 923409, 8 pages
http://dx.doi.org/10.1155/2010/923409
Research Article

Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

1Physics Department, Research Centre for Smart Materials and Energy, Faculty of Mathematics and Natural Sciences (FMIPA), Sebelas Maret University (UNS), Jl. Ir. Sutami no. 36A, Surakarta 57126, Indonesia
2Physics Department, Electronic Materials Laboratory, Faculty of Mathematics and Natural Sciences (FMIPA), Bandung Institute of Technology (ITB), Jl. Ganesha no. 10, Bandung 40132, Indonesia

Received 14 August 2010; Accepted 1 October 2010

Academic Editor: Maria Antonietta Loi

Copyright © 2010 A. H. Ramelan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. S. M. Kluth, J. D. Fitz Gerald, and M. C. Ridgway, “Ion-irradiation-induced porosity in GaSb,” Applied Physics Letters, vol. 86, no. 13, Article ID 131920, 3 pages, 2005. View at Publisher · View at Google Scholar · View at Scopus
  2. H. Shao, W. Li, A. Torfi, D. Moscicka, and W. I. Wang, “Room-temperature InAsSb photovoltaic detectors for mid-infrared applications,” IEEE Photonics Technology Letters, vol. 18, no. 16, pp. 1756–1758, 2006. View at Publisher · View at Google Scholar · View at Scopus
  3. Y. H. Kim, J. Y. Lee, Y. G. Noh, M. D. Kim, and J. E. Oh, “High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate,” Applied Physics Letters, vol. 90, no. 24, Article ID 241915, 3 pages, 2007. View at Publisher · View at Google Scholar · View at Scopus
  4. R. Hao, Y. Xu, Z. Zhou et al., “Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy,” Journal of Physics D, vol. 40, no. 4, pp. 1080–1084, 2007. View at Publisher · View at Google Scholar · View at Scopus
  5. P.-Y. Wang, J. F. Chen, and W. K. Chen, “Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor deposition,” Journal of Crystal Growth, vol. 160, no. 3-4, pp. 241–249, 1996. View at Google Scholar · View at Scopus
  6. Y. C. Lin, H. Yamaguchi, E. Y. Chang et al., “Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications,” Applied Physics Letters, vol. 90, no. 2, Article ID 023509, 3 pages, 2007. View at Publisher · View at Google Scholar · View at Scopus
  7. C. A. Wang, “Organometallic vapor phase epitaxial growth of AlSb-based alloys,” Journal of Crystal Growth, vol. 170, no. 1–4, pp. 725–731, 1997. View at Google Scholar · View at Scopus
  8. S. K. Haywood, R. W. Martin, N. J. Mason, R. J. Nicholas, and P. J. Walker, “GaSb/InAs heterojunctions grown by MOVPE,” Journal of Crystal Growth, vol. 107, no. 1–4, pp. 422–427, 1991. View at Google Scholar · View at Scopus
  9. F. S. Juang, Y. K. Su, N. Y. Li, and K. J. Gan, “Effects of trimethylantimonide/triethylgallium ratios on epilayer properties of gallium antimonide grown by low-pressure metalorganic chemical vapor deposition,” Journal of Applied Physics, vol. 68, no. 12, pp. 6383–6387, 1990. View at Publisher · View at Google Scholar · View at Scopus
  10. A. Aardvark, N. J. Mason, and P. J. Walker, “The growth of antimonides by MOVPE,” Progress in Crystal Growth and Characterization of Materials, vol. 35, no. 2–4, pp. 207–241, 1997. View at Google Scholar · View at Scopus
  11. T. Koljonen, M. Sopanen, H. Lipsanen, and T. Tuomi, “Metalorganic vapor phase epitaxial growth of AlGaSb and AlGaAsSb using all-organometallic sources,” Journal of Crystal Growth, vol. 169, no. 3, pp. 417–423, 1996. View at Publisher · View at Google Scholar · View at Scopus
  12. Ch. Ungermanns, H. Hardtdegen, M. Matt et al., “MOMBE and characterization of InAs and (Al,Ga)Sb,” Journal of Crystal Growth, vol. 188, no. 1–4, pp. 32–38, 1998. View at Google Scholar · View at Scopus
  13. H. Asahi, T. Kaneko, Y. Okuno, and S. Gonda, “Improved growth kinetic model for metalorganic molecular beam epitaxy using triethylgallium,” Japanese Journal of Applied Physics, Part 1, vol. 32, no. 6, pp. 2786–2793, 1993. View at Google Scholar · View at Scopus
  14. T. Koljonen, M. Sopanen, H. Lipsanen, and T. Tuomi, “Growth of high-quality GaSb by metalorganic vapor phase epitaxy,” Journal of Electronic Materials, vol. 24, no. 11, pp. 1691–1696, 1995. View at Publisher · View at Google Scholar · View at Scopus
  15. Y. Okuno, H. Asahi, T. Kaneko, Y. Itani, K. Asami, and S. Gonda, “MOMBE growth of AlGaSb,” Journal of Crystal Growth, vol. 115, no. 1–4, pp. 236–240, 1991. View at Google Scholar · View at Scopus
  16. J. M. Kang, M. Nouaoura, L. Lassabatère, and A. Rocher, “Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001),” Journal of Crystal Growth, vol. 143, no. 3-4, pp. 115–123, 1994. View at Google Scholar · View at Scopus
  17. F. Pascal, F. Delannoy, J. Bougnot et al., “Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide,” Journal of Electronic Materials, vol. 19, no. 2, pp. 187–195, 1990. View at Publisher · View at Google Scholar · View at Scopus
  18. S. C. Chen and Y. K. Su, “Photoluminescence study of gallium antimonide grown by liquid-phase epitaxy,” Journal of Applied Physics, vol. 66, no. 1, pp. 350–353, 1989. View at Publisher · View at Google Scholar · View at Scopus
  19. M.-C. Wu, C.-W. Chen, and C.-C. Chen, “Growth-temperature dependence of electrical and luminescent properties of high-quality GaSb grown by liquid-phase epitaxy,” Journal of Applied Physics, vol. 72, no. 3, pp. 1101–1103, 1992. View at Publisher · View at Google Scholar · View at Scopus
  20. G. B. Stringfellow, Organometalic Vapor-Phase Epitaxy, Academic Press, San Diego, Calif, USA, 1989.
  21. E. T. R. Chidley, S. K. Haywood, R. E. Mallard et al., “GaSb heterostructures grown by MOVPE,” Journal of Crystal Growth, vol. 93, no. 1–4, pp. 70–78, 1988. View at Google Scholar · View at Scopus
  22. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, A Handbook of X-Ray Photoelectron Spectroscopy, Physical Electronics Division, Perkin-Elmer Corporation, Eden Prairie, Minn, USA, 1992.