Review Article

Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

Figure 2

Epitaxial relationship at the Ni2Ge/Ge interface. (a) Lattice-resolved TEM image of the formed Ni2Ge nanowire. The inset shows the FFT pattern, confirming that the formed germanide phase is Ni2Ge. (b) TEM image of Ni2Ge/Ge heterostructure showing an atomically sharp interface. (c) Lattice-resolved TEM image of the unreacted Ge nanowire. The inset shows the FFT pattern. (d) Low magnification TEM image of the as-fabricated device with the Ni pad and the Ge nanowire. (e) Low magnification TEM image after annealing at 500°C. The arrow indicates the interface of the Ni2Ge/Ge nanowire. (f) EDS of Ni2Ge, showing a relative 2 : 1 concentration ratio of Ni and Ge atoms. Reproduced from [13].
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