Single-Ion Implantation for the Development of Si-Based MOSFET Devices with Quantum Functionalities
Figure 6
Ion registration with a lithographically patterned substrate using a scanned nanoaperture: (a) illustration of the concept of using a scanned nanoaperture to sequentially implant ions through an array of nanoapertures patterned on a substrate. (b) The nanopositioning system integrated with the single-ion detection system. (c) A 60 nm wide slot aperture in a Si cantilever formed by FIB milling and Pt back-filling. (d) A series of irradiation stripes formed in PMMA by 14 keV Ar irradiation through the slot aperture.
