Mn-Rich Nanostructures in Ge_1−𝑥Mn_𝑥: Fabrication, Microstructure, and Magnetic Properties

Table 1

Summary of typical Ge_1−𝑥Mn_𝑥 obtained with various growth methods.

NO.	Growth method	Substrate	Dopant concentration (at.)	𝑇𝑆 (°C)	𝑇𝐶 (K)	Main clusters
1 [5]	Bridgeman method	—	0/0.0044/0.013/0.038/0.062	1050	150–285	None
2 [7, 12]	Bridgeman method	—	0–0.1	1050	150–285	Mn11Ge8, Mn5Ge3
3 [10]	Ion implantation	Ge (100)	—	RT-300	—	Mn cluster, Mn5Ge3
4 [24]	Ion implantation	Ge (100)	~0.04	240/270	—	Mn5Ge3
5 [26]	Ion implantation	Ge (100)	—	300	250–270	Mn5Ge3
6 [27]	Ion implantation	Ge (100)	≤0.12	RT	~20	None
7 [13]	Ion implantation	Ge (100)	0.04	LN	5–293	None
8 [30]	Ion implantation	Ge (111)	—	RT	~300	None
9 [4]	MBE	GaAs (001)	0.006–0.035	70	25–166	Mn11Ge8
10 [9]	MBE	Si (001)	0.04	250	—	Mn5Ge3
11 [11]	MBE	Ge (100)	0.04	70/120	—	Mn11Ge8, Mn5Ge2
12 [31]	MBE	Ge (100)	0.01/0.033/0.05	160	—	Mn5Ge3
13 [16]	MBE	Si (001)	0.01–0.04	70/150	—	Mn cluster, Mn11Ge8, Mn5Ge3
14 [14]	MBE	Ge (001)	0.025–0.12	70	300	Mn5Ge3
15 [15]	MBE	Ge (100)	0.05	60; 70–120	<296	None, Mn5Ge3
16 [32]	MBE	Ge (100)	0–0.09	50–110	<296	None, Mn5Ge3
17 [33]	MBE	Si (001)	0.04	250	~298	Mn5Ge3
18 [34]	MBE	Ge (001)	0.01–0.11	80–200	120–170/300/>400	Nanocolumn, Mn5Ge3
19 [35]	MBE	Ge (100)	0.01–0.051	160	185–235	—
20 [36]	MBE	Ge (111)	0.03	50	~300	None
21 [37]	MBE	Ge (001)	~0.02	225	~290	Mn5Ge3
22 [38]	MBE	GaAs (001)	0.25–0.42	160–300	104	Mn11Ge8, Mn5Ge3
23 [39]	MBE	Ge (100)	0.034/0.402	120/70	300	Mn5Ge3
24 [40]	MBE	Si (001)	0.04	70	~300	Mn5Ge3
25 [17, 41]	MBE	Si (001)	0.05	450	~400	None
26 [21]	MBE	GaAs	—	70	~300	Coherent nanostructure, Mn5Ge3
27 [22]	TVT	—	0.05–0.20	800	350	None
28 [23]	SFLS	—	0.005–0.01	450	300	None