Table 1: Summary of typical obtained with various growth methods.

NO.Growth methodSubstrateDopant concentration (at.) (°C) (K)Main clusters

1 [5]Bridgeman method0/0.0044/0.013/0.038/0.0621050150–285None
2 [7, 12]Bridgeman method0–0.11050150–285Mn11Ge8, Mn5Ge3
3 [10]Ion implantationGe (100)RT-300Mn cluster, Mn5Ge3
4 [24]Ion implantation Ge (100)~0.04240/270Mn5Ge3
5 [26]Ion implantationGe (100)300250–270Mn5Ge3
6 [27]Ion implantation Ge (100)≤0.12RT~20None
7 [13]Ion implantation Ge (100)0.04LN5–293None
8 [30]Ion implantation Ge (111)RT~300None
9 [4]MBEGaAs (001)0.006–0.0357025–166Mn11Ge8
10 [9]MBESi (001)0.04250Mn5Ge3
11 [11]MBEGe (100)0.0470/120Mn11Ge8, Mn5Ge2
12 [31]MBEGe (100)0.01/0.033/0.05160Mn5Ge3
13 [16]MBESi (001)0.01–0.0470/150Mn cluster, Mn11Ge8, Mn5Ge3
14 [14]MBEGe (001)0.025–0.1270300Mn5Ge3
15 [15]MBEGe (100)0.0560
70–120
<296None, Mn5Ge3
16 [32]MBEGe (100)0–0.0950–110<296None, Mn5Ge3
17 [33]MBESi (001)0.04250~298Mn5Ge3
18 [34]MBEGe (001)0.01–0.1180–200120–170/300/>400Nanocolumn, Mn5Ge3
19 [35]MBEGe (100)0.01–0.051160185–235
20 [36]MBEGe (111)0.0350~300None
21 [37]MBEGe (001)~0.02225~290Mn5Ge3
22 [38]MBEGaAs (001)0.25–0.42160–300104Mn11Ge8, Mn5Ge3
23 [39]MBEGe (100)0.034/0.402120/70300Mn5Ge3
24 [40]MBESi (001)0.0470~300Mn5Ge3
25 [17, 41]MBESi (001)0.05450~400None
26 [21]MBEGaAs70~300Coherent nanostructure, Mn5Ge3
27 [22]TVT0.05–0.20800350None
28 [23]SFLS0.005–0.01450300None