Tunnel Contacts for Spin Injection into Silicon: The Si-Co Interface with and without a MgO Tunnel Barrier—A Study by High-Resolution Rutherford Backscattering
Figure 5
Co and Si (and Sb) concentrations as derived by RUMP simulations from the HRBS data of Figures 3 and 4. (c) Growth of 23.4 ML of Co on Si at room temperature, (b) 5.93 ML of Co deposited at low temperature (−60°C), and (a) growth of 19 ML of Co on Si with Sb as a surfactant. They seem to be representative for the interface structure in a stationary state. The free surface of the three samples is located at the right-most rim of the profiles. Layer 0 was deliberately put into the Si bulk.
