Series Resistance Analysis of Passivated Emitter Rear Contact Cells Patterned Using Inkjet Printing
Figure 4
(a) Open-circuit PL image of a PERC cell made using EN and LIP Cu. The brighter the area, the higher the voltage in that location. The arrows highlight the locations of some of the rear point contacts, red circles are locations of shunts; (b) series resistance PL image of the same cell, bias voltage is −300 mV.
