Deposition of Low Stress Silicon Nitride Thin Film and Its Application in Surface Micromachining Device Structures

Table 3

LPCVD nitride etching rate comparison.

Etchants	Temperature (°C)	Ratio (A/min)
		Normal Si3N4	LS SiN
BOE	38	26.36	11.17
BOE	25	7.68	2.66
KOH	50	0.05	0.01
40% HF	25	112.76	41.54
H3PO4	160	32.56	9.95