Application of Electron Beam Melting to the Removal of Phosphorus from Silicon: Toward Production of Solar-Grade Silicon by Metallurgical Processes

Table 3

Previous research on removal of P by induction furnace.

	Weight of Si sample/kg	Temperature/K	Chamber pressure/Pa	P content in ppm; (time)	Apparent mass transfer coefficient,; 𝑘1/m s^−1
Suzuki et al. (1990) [33]	0.02	1723~1823	2.7×10^−2	32→6~7 (2700 s)	1.6×10^−5 (1723 K)
					2.0×10^−5 (1823 K)
Yuge et al. (1997) [34]	0.02, 0.04, 1	1722~1915	0.8~3.6×10^−2	7→<0.1 (7200 s)	ln𝑘1= −2.29 − 15600/T
Zheng et al. (2010) [35]; (2011) [36, 37]	5	1823	0.03	15→11 (7200 s)	(Dependence on pressure was studied); 10^−5∼10^−6 at 0.01~1 Pa,; Below 10^−9 at over 10000 Pa (1783 K)
		1873	0.03~0.07	15→7.3 (7200 s)
		1923	0.03~0.13	15→2.6 (7200 s)
		1923	0.02~0.09	15→1.7 (7200 s)
		1973	0.04~0.25	15→0.41 (7200 s)
		1973	0.01~0.05	15→0.15 (7200 s)
	—	1873	0.6–0.8	460→10 (3600 s)
Safarian and Tangstad (2012) [38, 39]	0.3	1773	0.5	17→9.8 (900 s)	2.3×10^−6 (1773 K)
		1873		17→5.9 (900 s), 1.5 (1800 s)	4.9×10^−6 (1873 K)
		1873		24→19 (3600 s)	2.2×10^−6 (1873 K)
		1973		24→0.4~3 (9000 s)	1.9×10^−5 (1973 K)