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Advances in Materials Science and Engineering
Volume 2013, Article ID 950439, 5 pages
Research Article

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Department of Electronic Engineering, Ming Chuan University, Taoyuan, Taiwan 333, Taiwan

Received 5 August 2013; Accepted 30 September 2013

Academic Editor: Chun-Hsing Shih

Copyright © 2013 Fu-Chien Chiu. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode method and the subthreshold measurement. The density of interface-trapped charges, the current induced by surface defect centers, the surface recombination velocity, and the surface state capture cross-section are obtained in this work. Among the interfacial properties, the surface state capture cross-section is approximately constant even if the postdeposition annealing condition is changed. This effective capture cross-section of surface states is about 2.4 × 10−15 cm2, which may be an inherent nature in the HfO2/Si interface.