Advances in Materials Science and Engineering / 2013 / Article / Fig 4

Research Article

Surface State Capture Cross-Section at the Interface between Silicon and Hafnium Oxide

Figure 4

Channel electron mobility versus effective surface field for the HfO2 MOSFETs annealed at 500°C for 60 s in N2 and N2/O2.
950439.fig.004

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19.