Advances in Materials Science and Engineering / 2013 / Article / Tab 1

Research Article

Effects of the Boron-Doped p+ Emitter on the Efficiency of the n-Type Silicon Solar Cell

Table 1

Contact resistance at each doping concentration of boron.

Doping concentration (atoms/cm3)Contact resistance (Ωcm2)

1 × 10170.5
5 × 10170.2
1 × 10180.1
5 × 10180.07
1 × 10190.05
5 × 10190.01
1 × 10200.005
5 × 10200.001
1 × 10210.0005
5 × 10210.0001
1 × 10220.00001
2 × 10220

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