Microstructural and Dielectric Properties of Zr Doped Microwave Sintered CaCu_𝟑Ti_𝟒O_𝟏𝟐 Synthesized by Sol-Gel Route

Table 1

Dielectric constant and loss of CCTO and zirconium dopants using microwave sintering at 1000°C for 10 min.

Frequency Hz	𝑥=0		𝑥=0.02		𝑥=0.1		𝑥=0.2		𝑥=0.5
	𝜀𝑟	tan𝛿	𝜀𝑟	tan𝛿	𝜀𝑟	tan𝛿	𝜀𝑟	tan𝛿	𝜀𝑟	tan𝛿
50	1730	0.16	21,500	5.00	1570	0.80	12,300	9.99	7960	8.33
100	1633	0.15	17,200	3.38	1430	0.47	10,900	9.99	7020	4.73
1 K	1572	0.06	5290	1.91	1200	0.12	6200	4.11	5060	0.81
10 K	1527	0.06	1140	1.57	1090	0.08	4300	0.73	3610	0.33
100 K	1491	0.06	301	1.39	961	0.13	3390	0.34	2470	0.31
1 M	1462	0.17	74.2	1.25	724	0.37	1240	1.06	1490	0.52