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Advances in Materials Science and Engineering
Volume 2014, Article ID 196732, 5 pages
http://dx.doi.org/10.1155/2014/196732
Research Article

Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

1Department of ECE, Annai Vailankanni College of Engineering, Tamil nadu, India
2Department of IT, RMK College of Engineering and Technology, Chennai, India
3Centre for Information Technology and Engineering, Manonmaniam Sundaranar University, Tirunelveli, India
4Department of ECE, Shri Sapthagiri Institute of Technology, Vellore, India

Received 27 June 2014; Revised 10 August 2014; Accepted 11 August 2014; Published 8 September 2014

Academic Editor: George Z. Kyzas

Copyright © 2014 T. D. Subash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

T. D. Subash, T. Gnanasekaran, C. Divya, and J. Jagannathan, “Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices,” Advances in Materials Science and Engineering, vol. 2014, Article ID 196732, 5 pages, 2014. https://doi.org/10.1155/2014/196732.