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Advances in Materials Science and Engineering
Volume 2014, Article ID 197937, 12 pages
Research Article

Microwave Analysis for Two-Dimensional C-V and Noise Model of AlGaN/GaN MODFET

1Department of ECE, Guru Jambheshwar University of Science and Technology, Teaching Block 7, Hisar, Haryana 125001, India
2Department of CSE, Krishna Institute of Engineering and Technology, Ghaziabad, Uttar Pradesh 201206, India

Received 12 May 2014; Revised 5 August 2014; Accepted 6 August 2014; Published 10 September 2014

Academic Editor: Baibiao Huang

Copyright © 2014 Ramnish Kumar et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A new two-dimensional analytical model for the capacitance-voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two-dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device is shown. The model further predicts the transconductance, drain conductance, and frequency of operation. A high transconductance of 160 mS/mm and a cut-off frequency of 11.6 GHz are obtained for a device of 50 nm gate length. The effect of gate length on the gate length behaviour of the noise coefficients P, R, and C is also studied. The effect of parasitic source and gate resistance has also been studied to evaluate the minimum noise figure. The excellent agreement with the previously simulated results confirms the validity of the proposed model to optimize the device performance at high frequencies.