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Advances in Materials Science and Engineering
Volume 2014 (2014), Article ID 370861, 4 pages
http://dx.doi.org/10.1155/2014/370861
Research Article

Optical and Electrical Properties of Ag-Doped In2S3 Thin Films Prepared by Thermal Evaporation

School of Physics and Information Engineering, Fuzhou University, No. 2 Xueyuan Road, Minhou Shangjie, Fuzhou, Fujian 350116, China

Received 25 March 2014; Accepted 22 June 2014; Published 4 August 2014

Academic Editor: Hao Wang

Copyright © 2014 Peijie Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Ag-doped In2S3 (In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3 and AgIn5S8 phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103 to  Ω cm.