Study of Interface Charge Densities for ZrO₂ and HfO₂ Based Metal-Oxide-Semiconductor Devices

Table 3

value for ZrO₂ and HfO₂ at different EOT at 1 MHz.

EOT (nm)	ZrO2 (cm^−2 ev^−1)	HfO2 (cm^−2 ev^−1)
1.77
2.65
3.54