Research Article

Improving the Efficiency Enhancement of Photonic Crystal Based InGaN Solar Cell by Using a GaN Cap Layer

Figure 3

Calculated short-circuit current density for an optimized solar cell structure with a 20 nm-thick InGaN layer and  nm. The incident light is (a) parallel and (b) perpendicularly polarized to the photonic crystal pattern. (c) For unpolarized illumination.
605204.fig.003a
(a)
605204.fig.003b
(b)
605204.fig.003c
(c)