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Advances in Materials Science and Engineering
Volume 2014, Article ID 751973, 5 pages
http://dx.doi.org/10.1155/2014/751973
Research Article

Up- and Downconversion Luminescence Properties of Nd3+ Ions Doped in Bi2O3–BaO–B2O3 Glass System

1Department of Physics, Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140, Thailand
2Optical Thin-Film Laboratory National Electronics and Computer Technology Center, Pathumthani 12120, Thailand
3Center of Excellence in Glass Technology and Materials Science (CEGM), Nakhon Pathom Rajabhat University, Nakhon Pathom 73000, Thailand
4Department of Physics, Kyungpook National University, Deagu 702-701, Republic of Korea
5Chemistry Program, Faculty of Science and Technology, Nakhon Pathom Rajabhat University, Nakhon Pathom 73000, Thailand

Received 13 November 2013; Accepted 16 December 2013; Published 28 January 2014

Academic Editor: Luigi Nicolais

Copyright © 2014 R. Ruamnikhom et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Physical, optical, and luminescence properties of Nd3+ ions in bismuth barium borate glass system were studied. The glasses prepared by a melt quenching method were doped at various Nd2O3 concentrations in compositions (40-x)B2O3 : 40Bi2O3 : 20BaO : xNd2O3 (where x = 0.00, 0.50, 1.00, 1.50, 2.00, and 2.50 in mol%). Luminescence properties of the glasses were studied under two excitations of 585 and 750 nm for downconversion. From both excitations, the results show emission bands in NIR region corresponding to the transitions between 4F3/2 → 4I9/2 (900 nm), 4F3/2 → 4I11/2 (1,060 nm), and 4F3/2  4I13/2 (1,345 nm). The luminescence intensity obtained with 585 nm excitation was stronger than 750 nm, with the strongest NIR emission at 1,060 nm. The upconversion emission spectrum exhibits strong fluorescence bands in the UV region at 394 nm ( nm). The processes are associated with excited state absorption (ESA) from 4F3/2 level to 4D3/2 level and it is the radiative decay from the 4D3/2 to ground levels (4D3/2 → 4I13/2) which are responsible for the emission at 394 nm.