Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Figure 5

SEM images of tips after the Si etching with three different anisotropy factors: (a) 𝑓=0.4, (b) 𝑓=0.5, and (c) 𝑓=0.6.

(a)

(b)

(c)