Research Article

Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

Figure 9

SEM images of emitters measured at the investigation: (a) with a height of 0 : 9 μm and (b) with a radius of 40 nm.
948708.fig.009a
(a)
948708.fig.009b
(b)