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Advances in Materials Science and Engineering
Volume 2014, Article ID 979450, 6 pages
Research Article

Diamond-Like Carbon Film Deposition Using DC Ion Source with Cold Hollow Cathode

1Scientific Educational Center of Nanotechnologies, North-Caucasus Federal University, Stavropol 355029, Russia
2Southern Scientific Center of Russian Academy of Sciences, Rostov-on-Don 344006, Russia

Received 9 May 2013; Accepted 5 November 2013; Published 23 January 2014

Academic Editor: Maria Loi

Copyright © 2014 E. F. Shevchenko et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Carbon diamond-like thin films on a silicon substrate were deposited by direct reactive ion beam method with an ion source based on Penning direct-current discharge system with cold hollow cathode. Deposition was performed under various conditions. The pressure (12–200 mPa) and the plasma-forming gas composition consisting of different organic compounds and hydrogen (C3H8, CH4, Si(CH3)2Cl2, H2), the voltage of accelerating gap in the range 0.5–5 kV, and the substrate temperature in the range 20–850°C were varied. Synthesized films were researched using nanoindentation, Raman, and FTIR spectroscopy methods. Analysis of the experimental results was made in accordance with a developed model describing processes of growth of the amorphous and crystalline carbon materials.