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Advances in Materials Science and Engineering
Volume 2014, Article ID 980639, 11 pages
Research Article

Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

1Nanotechnology Research Center (NANOTAM), Department of Physics, Bilkent University, 06800 Ankara, Turkey
2Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara, Turkey
3Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey

Received 24 March 2014; Revised 6 June 2014; Accepted 9 June 2014; Published 10 August 2014

Academic Editor: Xinhe Zheng

Copyright © 2014 Engin Arslan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The 150 nm thick, (0001) orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm) template/(0001) sapphire substrate. The indium (x) concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x), lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002) and asymmetric (10–15) reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations) of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.