Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

Table 1

The In content (), lattice parameters and and the strain components and of the AlInN epilayers, calculated from the RSM measurements and the relaxed lattice parameters and of the AlInN epilayers calculated by using Vegard’s law are given in column 4 and 5, respectively. In the last column, the RSM roughness of the  nm² scan AFM image is demostrated (the uncertainty in values is approx. ).

Indium content ()	AlInN epilayers
	(Ǻ)	(Ǻ)	(Ǻ)	(Ǻ)	(×10^−3)	(×10^−2)	RMS roughness (nm)
0.04	3.185	4.989	3.128	5.009	−4.1	1.8	0.3
0.18	3.214	5.119	3.191	5.116	0.7	−0.3	1.4
0.20	3.181	5.119	3.197	5.125	−1.3	0.5	6.9
0.47	4.182	5.084	3.316	5.326	−45.5	26.0	2.7
0.48	4.189	5.085	3.317	5.328	−45.7	26.0	2.5