Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

Table 2

The measured edge and screw type dislocations densities in GaN template layers and the AlInN epilayers are listed.

In content ()	GaN template layers		AlInN epilayers
	(×10^8 cm^−2)	(×10^8 cm^−2)	(×10^8 cm^−2)	(×10^8 cm^−2)
0.04	1.3	4.3	1.7	14.1
0.18	1.0	5.8	1.1	6.7
0.20	1.2	7.2	1.3	7.5
0.47	0.8	2.1	7.3	41.0
0.48	1.0	3.8	6.2	58.0