A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability

<div>(a) TLP <svg height="8.56701pt" id="M14" style="vertical-align:-0.1169996pt" version="1.1" viewbox="0 -8.45001 19.8455 8.56701" width="19.8455pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,5.645,0)"><path d="M300 253H71L57 198H286L300 253Z" id="g190-46"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="356" vert-adv-y="356"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.29,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g></svg> curve comparison among the GGNMOS and various butting pickup conditions with 1.8 V power supply. (b) TLP <svg height="8.56701pt" id="M15" style="vertical-align:-0.1169996pt" version="1.1" viewbox="0 -8.45001 19.8455 8.56701" width="19.8455pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,5.645,0)"><path d="M300 253H71L57 198H286L300 253Z" id="g190-46"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="356" vert-adv-y="356"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.29,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g></svg> curve comparison among the GGNMOS and various inserted pickup conditions with 1.8 V power supply. (c) TLP <svg height="8.56701pt" id="M16" style="vertical-align:-0.1169996pt" version="1.1" viewbox="0 -8.45001 19.8455 8.56701" width="19.8455pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M418 650H141L133 618C225 611 232 604 218 531L141 120C126 45 119 37 33 32L24 0H301L308 32C220 37 214 44 227 120L305 531C319 605 325 611 411 618L418 650Z" id="g50-74"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="442" vert-adv-y="442"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,5.645,0)"><path d="M300 253H71L57 198H286L300 253Z" id="g190-46"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="356" vert-adv-y="356"></glyph.data></g><g transform="matrix(.013,0,0,-0.013,10.29,0)"><path d="M735 650H491L482 618L516 614C568 608 571 595 541 535L299 115H297L196 559C187 600 195 608 238 614L265 618L275 650H26L18 618C79 611 98 605 115 527L234 -9H272C389 197 542 449 591 523C647 608 656 612 726 618L735 650Z" id="g50-87"></path><glyph.data ascent="3443" descent="-2856" horiz-adv-x="747" vert-adv-y="747"></glyph.data></g></svg> curve comparison among the normal GGNMOS and various butting/inserted pickup conditions with 3.3 V power supply.</div>

Advances in Materials Science and Engineering

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Figure 3

Figure 3: A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability 