A Study of Thin Film Resistors Prepared Using Ni-Cr-Si-Al-Ta High Entropy Alloy

Figure 5

TEM micrographs and selected-area electron diffraction of Ni-Cr-Si-Al-Ta films sputtered and annealed at 200 W/300°C for (a) and (b) and 200 W/500°C for (c) and (d).

(a)

(b)

(c)

(d)