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Advances in Materials Science and Engineering
Volume 2015, Article ID 920421, 11 pages
Research Article

Ellipsometric Analysis of Cadmium Telluride Films’ Structure

1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41 Prospect Nauky, Kyiv 03028, Ukraine
2Taras Shevchenko Kyiv National University, Physics Department, 2 Prospect Academician Glushkov, Kyiv 03022, Ukraine

Received 5 January 2015; Revised 5 April 2015; Accepted 6 April 2015

Academic Editor: Lian Gao

Copyright © 2015 Anna Evmenova et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Ellipsometric analysis of CdTe films grown on Si and CdHgTe substrates at the “hot-wall” epitaxy vacuum setup has been performed. It has been found that ellipsometric data calculation carried out by using a simple one-layer film model leads to radical distortion of optical constants spectra: this fact authenticates the necessity to attract a more complicated model that should include heterogeneity of films. Ellipsometric data calculation within a two-layer film model permitted to conclude that cadmium telluride films have an outer layer that consists of the three-component mixture of CdTe, cavities, and basic matter oxide. Ratio of mixture components depends on the time of deposition, that is, on the film thickness. The inner layer consists of cadmium telluride.