Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition

<div>The refraction index <i>n</i> (a) and the extinction coefficient <i>k</i> (b) of InSb thin film (S2) with varied temperatures of 20°C–300°C.</div>

Advances in Materials Science and Engineering

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Figure 9

Figure 9: Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition 

Figure 9 | Synchrotron Radiation X-Ray Absorption Spectroscopy and Spectroscopic Ellipsometry Studies of InSb Thin Films on GaAs Grown by Metalorganic Chemical Vapor Deposition 