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Advances in Materials Science and Engineering
Volume 2018, Article ID 8797031, 10 pages
Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Physical-Technical Institute, Scientific Association “Physics-Sun”, Uzbek Academy of Sciences, Bodomzor yo’li 2B, Tashkent 100084, Uzbekistan

Correspondence should be addressed to Kh. N. Juraev; moc.liamg@ilatammihk

Received 30 October 2017; Accepted 1 January 2018; Published 28 February 2018

Academic Editor: Marco Cannas

Copyright © 2018 I. G. Atabaev and Kh. N. Juraev. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p-i SiC junction and i-region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p-i-n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120–140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.