Advances in Materials Science and Engineering / 2018 / Article / Fig 10

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 10

Oscillogram of the current switching diode based on 4H-SiC<B>, measured when switching diodes from forward current (I = 25 mA) to a reverse voltage of 60 V.

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