Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

<div>Oscillogram of the current switching diode based on 4H-SiC&lt;B&gt;, measured when switching diodes from forward current (I = 25 mA) to a reverse voltage of 60 V.</div>

Advances in Materials Science and Engineering

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Figure 10

Figure 10: Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron