Advances in Materials Science and Engineering / 2018 / Article / Fig 11

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 11

The temperature dependence of the reverse breakdown voltage of diodes based on 4H-SiC<B> (measurements were carried out at a current of 100 mA).

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