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Advances in Materials Science and Engineering
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Advances in Materials Science and Engineering
/
2018
/
Article
/
Fig 3
/
Research Article
Research of
p
-
i
-
n
Junctions Based on 4
H
-SiC Fabricated by Low-Temperature Diffusion of Boron
Figure 3
Distribution of boron on the top of
p
-region of 3
C
-SiC<B> (measured using Ni-
p
-SiC Schottky barriers) [
37
].