Advances in Materials Science and Engineering / 2018 / Article / Fig 3

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 3

Distribution of boron on the top of p-region of 3C-SiC<B> (measured using Ni-p-SiC Schottky barriers) [37].

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