Advances in Materials Science and Engineering / 2018 / Article / Fig 5

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 5

The dependence of capacitance (a) and the value 1/C2 (b) for one of the diodes for reverse voltages, measured at 1 MHz.

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