Advances in Materials Science and Engineering / 2018 / Article / Fig 7

Research Article

Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

Figure 7

Impedance of the diode structure at different frequencies in the direct (a) and reverse (b) voltage (•, 5 kHz; ▲, 10 kHz; ▼, 15 kHz; ■, 20 kHz).
(a)
(b)

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