Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron

<div>Impedance of the diode structure at different frequencies in the direct (a) and reverse (b) voltage (•, 5 kHz; ▲, 10 kHz; ▼, 15 kHz; ■, 20 kHz).</div>

Advances in Materials Science and Engineering

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Figure 7

Figure 7: Research of p-i-n Junctions Based on 4H-SiC Fabricated by Low-Temperature Diffusion of Boron